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Proceedings Paper

Direct laser writing on porous silicon
Author(s): Andrea Mario Rossi; Stefano Borini; Luca Boarino; Gianpiero Amato
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Paper Abstract

An easy and effective technique for locally oxidize, melt or remove Porous Silicon layers is presented and discussed. The method takes advantage from the very low thermal conductivity of Porous Silicon. With the aid of a focused laser beam, it is possible to reach temperatures of several hundreds °C at the illuminated spot. Results on fabrication of all-porous planar waveguides are presented and discussed. Preliminary results on the application of this technique for fabricating 2D and 3D photonic crystals are reported.

Paper Details

Date Published: 15 April 2003
PDF: 8 pages
Proc. SPIE 4941, Laser Micromachining for Optoelectronic Device Fabrication, (15 April 2003); doi: 10.1117/12.468493
Show Author Affiliations
Andrea Mario Rossi, Istituto Elettrotecnico Nazionale Galileo Ferraris (Italy)
Stefano Borini, Istituto Elettrotecnico Nazionale Galileo Ferraris (Italy)
Luca Boarino, Istituto Elettrotecnico Nazionale Galileo Ferraris (Italy)
Gianpiero Amato, Istituto Elettrotecnico Nazionale Galileo Ferraris (Italy)


Published in SPIE Proceedings Vol. 4941:
Laser Micromachining for Optoelectronic Device Fabrication
Andreas Ostendorf, Editor(s)

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