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Proceedings Paper

PEC fogging effect analysis using high-performance EB simulator capable of large-area mask pattern simulation
Author(s): Naoko Kuwahara; Takeshi Ohfuji; Naoya Hayashi; Curt A. Jackson; Naoki Kitano; David H. Hwang
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Paper Abstract

We have developed a novel EB lithography simulator, which can analyze pattern profiles and CDs for an unlimited area. The simulator has a parallel Monte Carlo calculation mode with unequal mesh dividing, works on PC cluster hardware, and the new convolution algorithm. The simulation pattern profiles well-reproduced, observable chemically amplified resist pattern profiles. Simulated CD errors also well agree with measured PEC errors, when we compare the CDs for isolated line, line in lines/spaces and isolated space. Finally, the simulator also predicts the CD error difference between low-density and high-density global areas, which is caused by the fogging effect. The developed simulator demonstrates that the simulator can be applied for all CD performance analyses and has the potential to be a mainstream device for EB lithography simulation.

Paper Details

Date Published: 27 December 2002
PDF: 9 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468466
Show Author Affiliations
Naoko Kuwahara, Dai Nippon Printing Co., Ltd. (Japan)
Takeshi Ohfuji, Intel K.K. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Curt A. Jackson, Intel Corp. (United States)
Naoki Kitano, Intel K.K. (Japan)
David H. Hwang, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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