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Proceedings Paper

Interferometry system for the mechanical characterization of membranes with silicon oxynitride thin films fabricated by PECVD
Author(s): Michal Jozwik; Patrick Delobelle; Andrei Sabac; Christophe Gorecki
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Paper Abstract

In this paper, we present a method for the internal stress characterization of silicon membranes with silicon oxynitride thin films (SiOxNy) deposited by PECVD (plasma enhanced chemical vacuum deposition). Connecting the interferometric measurements (Twyman-Green interferometer) of out-of-plan displacements of SiOxNy-loaded membranes with evaluation of micromechanical parameters (Young's modulus, Poisson ratio) obtained by nanoindentation we evaluated the residual stress of SiOxNy thin films via point-wise deflection technique. The magnitude of stress is monitored as a function of the refractive index of SiOxNy establishing the relationship between the optical and micromechanical properties of deposited films.

Paper Details

Date Published: 25 March 2003
PDF: 6 pages
Proc. SPIE 4945, MEMS/MOEMS: Advances in Photonic Communications, Sensing, Metrology, Packaging and Assembly, (25 March 2003); doi: 10.1117/12.468412
Show Author Affiliations
Michal Jozwik, Warsaw Univ. of Technology (Poland)
Patrick Delobelle, Univ. de Franche-Comte (France)
Andrei Sabac, Univ. de Franche-Comte (France)
Christophe Gorecki, Univ. de Franche-Comte (France)


Published in SPIE Proceedings Vol. 4945:
MEMS/MOEMS: Advances in Photonic Communications, Sensing, Metrology, Packaging and Assembly

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