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Proceedings Paper

Investigation of nanomachining as a technique for geometry reconstruction
Author(s): David Brinkley; Ron Bozak; Bin Chiu; Chanh Ly; Vikram Tolani; Roy White
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Paper Abstract

Nanomachining is a relatively new technique to the semiconductor industry. This technique utilizes the positional control of an atomic force microscope coupled with RAVE LLC's nanomachining head to perform material removal with nanometer level precision. This paper discusses the benefits of that technology as applied to photomask repair. Specifically, we will show the capability of the RAVE nm1300 to reconstruct completely missing contacts on 193 nm - 6% MoSi phase shift material utilizing both symmetric and asymmetric NanoBit tips. Wafer print test data confirmed the MSM-193 (AIMS)TM data that symmetric NanoBit tips have the ability to consistently produce contacts with through focus critical dimensions within 15 nm (1x) of unrepaired contacts. Experiments show that in order to reproduce the correct through focus behavior, the nanomachined depth into the quartz substrate must be controlled to within 5 nm on the photomask. In addition, 193 nm AIMS data show that placement errors of the reconstructed contacts are less than 15 nm (1x). Throughput and tip lifetime for both tip types on these repairs will also be examined.

Paper Details

Date Published: 27 December 2002
PDF: 9 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468275
Show Author Affiliations
David Brinkley, Intel Corp. (United States)
Ron Bozak, RAVE LLC (United States)
Bin Chiu, RAVE LLC (United States)
Chanh Ly, Intel Corp. (United States)
Vikram Tolani, Intel Corp. (United States)
Roy White, RAVE LLC (United States)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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