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Proceedings Paper

Design, fabrication, and testing of an integrated Si-based light modulator
Author(s): Antonella Sciuto; Sebania Libertino; Salvatore Coffa
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Paper Abstract

The implementation of efficient Si optical functions has attracted a considerable interest in the last years since it would allow the use of Si technology for the realisation of integrated optoelectronic (OE) devices. We have fabricated and characterised a novel Si-based light modulator working at the standard communication wavelength of 1.54μm. It consists of a three terminal Bipolar Mode Field Effect Transistor (BMFET) integrated in a silicon rib waveguide realised on epitaxial (epi) Si wafers. The optical channel of the modulator is embodied within its vertical electrical channel. Light modulation is obtained through the formation of a plasma of carriers, inside the optical channel, that produces an increase of the absorption coefficient. Modulation is achieved by moving the plasma inside and outside the optical channel by properly changing the bias of the control electrode. The devices have been fabricated using clean room processes fully compatible with ULSI technology. Electrical characterisation shows a strong channel conductivity modulation. Optical measurements confirm the plasma formation in the channel. The distribution of the plasma under different bias conditions has been directly derived from Emission Microscopy analysis. The devices exhibit modulation depths ranging from 68% up to 83% depending on the bias conditions.

Paper Details

Date Published: 11 March 2003
PDF: 10 pages
Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); doi: 10.1117/12.468250
Show Author Affiliations
Antonella Sciuto, INFM (Italy)
Univ. degli Studi di Catania (Italy)
Sebania Libertino, CNR-IMM (Italy)
Salvatore Coffa, STMicroelectronics (Italy)


Published in SPIE Proceedings Vol. 4947:
Laser Diodes, Optoelectronic Devices, and Heterogenous Integration

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