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Proceedings Paper

Cr and TaN absorber mask etch CD performance study for extreme-ultraviolet lithography
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Paper Abstract

Extreme Ultraviolet Lithography (EUVL) is the leading candidate for the 45 nm node technology and beyond. A mask film structure and material selection become increasingly important for a success in the EUVL mask process development. Etch CD performance is considered in the material selection of an EUV mask absorber stack. This paper reports the study of etch CD performance and pattern loading effects in the plasma etch on two potential absorber materials of Cr and TaN. The etch process was experimentally setup on wafer samples and two different film etches were conducted in the same etch chamber. The CD data was collected on an SEM and was used for the CD performance analysis and comparison. In this study, it was found that the process etch CD bias in the TaN etch was significantly smaller than that in the Cr etch due to a fast etch rate of the TaN etch. The variation of the etch CD bias in the TaN etch was slightly higher than that in the Cr etch. The global pattern density changes had less impact to the Cr etch bias than the TaN etch bias.

Paper Details

Date Published: 27 December 2002
PDF: 7 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468213
Show Author Affiliations
Guojing Zhang, Intel Corp. (United States)
Pei-yang Yan, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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