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Proceedings Paper

Simulation-based defect printability analysis on alternating phase-shifting masks for 193-nm lithography
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Paper Abstract

For alternating aperture phase shift masks (AAPSM) and 193 nm (ArF) lithography, we have simulated defect printability using inspection images and software-based modeling. Masks were fabricated by DuPont Photomasks with programmed defects of known size, phase, and location. Three phase layers were used to generate defect angles 60, 120 and 180 degrees. Simulated wafer prints were performed using Numerical Technologies’ Virtual Stepper System, which takes inspection images as input and models the lithographic process. With inspection images from KLA-Tencor’s SLF27 system, our critical-dimension measurements show good agreement with those from wafers printed on an ASML PAS 5500/900 scanner.

Paper Details

Date Published: 27 December 2002
PDF: 8 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468205
Show Author Affiliations
Linyong Pang, Numerical Technologies, Inc. (United States)
Zongchang Yu, KLA-Tencor Corp. (United States)
Gerard T. Luk-Pat, Numerical Technologies, Inc. (United States)
Jerry X. Chen, DuPont Photomasks, Inc. (United States)
William Volk, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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