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Feasibility study of detectability and printability for TaSiOx
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Paper Abstract

HT-PSMs (Half Tone Phase Shifting Masks) are well known as one of the key technologies to obtain high resolution and expand process window of lithography. And furthermore, high transmission HT-PSMs are expected to show better DOF and MEEF than conventional transmission, such as 6%, HT-PSM. We have already developed and reported TaSiOx shifter as a high transmission HT material for ArF lithography. And also we have reported its process performance such as good phase controllability, vertical side-wall angle, no damage on quartz surface during shifter dry etching and good CD uniformity. The key point to obtain these performances is the characteristics of etching stop function of its bi-layered structure. This bi-layered structure also enabled transmission at the inspection wavelength to keep enough low to inspect by current inspection systems. In this report, in order to confirm the feasibility of mass-manufacturing of the TaSiOx high transmission HT-PSM, we fabricated programmed defect test mask and performed following experiments. Defect detectability was evaluated by KLA-Tencor SLF27 and compared to printability results that were confirmed by ZEISS MSM193. We will also show some preliminarily results of repairing tests on this TaSiOx material.

Paper Details

Date Published: 27 December 2002
PDF: 9 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468201
Show Author Affiliations
Masaharu Nishiguchi, Dai Nippon Printing Co., Ltd. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Toshiaki Motonaga, Dai Nippon Printing Co., Ltd. (Japan)
Kenji Noguchi, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Morihisa Hoga, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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