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Proceedings Paper

Electron-beam-induced processes and their applicability to mask repair
Author(s): Volker A. Boegli; Hans W. P. Koops; Michael Budach; Klaus Edinger; Ottmar Hoinkis; Bernd Weyrauch; Rainer Becker; Rudolf Schmidt; Alexander Kaya; Andreas Reinhardt; Stephan Braeuer; Heinz Honold; Johannes Bihr; Jens Greiser; Michael Eisenmann
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Paper Abstract

The applicability of electron-beam induced chemical reactions to mask repair is investigated. To achieve deposition and chemical etching with a focused electron-beam system, it is required to disperse chemicals in a molecular beam to the area of interest with a well-defined amount of molecules and monolayers per second. For repair of opaque defects the precursor gas reacts with the absorber material of the mask and forms a volatile reaction product, which leaves the surface. In this way the surface atoms are removed layer by layer. For clear defect repair, additional material, which is light absorbing in the UV, is deposited onto the defect area. This material is rendered as a nanocrystalline deposit from metal containing precursors. An experimental electron-beam mask repair system is developed and used to perform exploratory work applicable to photo mask, EUV mask, EPL and LEEPL stencil mask repair. The tool is described and specific repair actions are demonstrated. Platinum deposited features with lateral dimensions down to 20 nm demonstrate the high resolution obtainable with electron beam induced processes, while AFM and AIMS measurements indicate, that specifications for mask repair at the 70 nm device node can be met. In addition, examples of etching quartz and TaN are given.

Paper Details

Date Published: 27 December 2002
PDF: 10 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468200
Show Author Affiliations
Volker A. Boegli, NaWoTec GmbH (United States)
Hans W. P. Koops, NaWoTec GmbH (United States)
Michael Budach, NaWoTec GmbH (United States)
Klaus Edinger, NaWoTec GmbH (United States)
Ottmar Hoinkis, NaWoTec GmbH (United States)
Bernd Weyrauch, NaWoTec GmbH (United States)
Rainer Becker, NaWoTec GmbH (United States)
Rudolf Schmidt, NaWoTec GmbH (United States)
Alexander Kaya, NaWoTec GmbH (United States)
Andreas Reinhardt, NaWoTec GmbH (United States)
Stephan Braeuer, NaWoTec GmbH (United States)
Heinz Honold, LEO Elektronenmikroskopie GmbH (Germany)
Johannes Bihr, LEO Elektronenmikroskopie GmbH (Germany)
Jens Greiser, LEO Elektronenmikroskopie GmbH (Germany)
Michael Eisenmann, LEO Elektronenmikroskopie GmbH (Germany)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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