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Proceedings Paper

Application of chromeless phase lithography (CPL) masks in ArF lithography
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Paper Abstract

The challenges of low k1 lithography require unique solutions at all levels of the lithography process. Chromeless phase lithography (CPL) is a promising technique that uses a 2-beam imaging strategy and a unique OPC application for enhanced CD uniformity through pitch. It is particularly effective when combined with a high numerical aperture (NA) and off-axis illumination (OAI). In addition to its imaging benefits, CPL masks offer many advantages in the manufacturing of the mask over other approaches. The manufacturing strategy and methodology employed to fabricate CPL masks will be discussed. The technical challenges of mask production will also be highlighted. Application of CPL to production ArF images were characterized through simulations and experimental data demonstrating the capability of this technique to produce complex structures.

Paper Details

Date Published: 27 December 2002
PDF: 13 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468107
Show Author Affiliations
Bryan S. Kasprowicz, Photronics Inc. (United States)
Christopher J. Progler, Photronics Inc. (United States)
Wei Wu, Motorola, Inc. (United States)
Will Conley, Motorola, Inc. (United States)
Lloyd C. Litt, Motorola, Inc. (United States)
Douglas J. Van Den Broeke, ASML Masktools, Inc. (United States)
Kurt E. Wampler, ASML Masktools, Inc. (United States)
Robert John Socha, ASML (United States)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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