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Proceedings Paper

Recovery of Mo/Si-multilayer-coated LTEM substrate
Author(s): Pawitter J. S. Mangat; A. Alec Talin; Andrew F. Hooper; Diana Convey; Sang-In Han; James R. Wasson
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Paper Abstract

Extreme ultraviolet lithography (EUVL) is a leading next generation lithography technology. The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor that is coated with Mo/Si multilayers. One of the challenges in implementing EUVL is to economically fabricate multilayer-coated mask blanks with no printable defects. The starting substrates, due to the required tight specifications of flatness and defects, might have a very high manufacturing cost and hence a method to recover these substrates for reuse without compromising the properties will enable a lower cost for the masks. This paper details a potential approach to remove the damaged multilayers from the substrates without compromising the morphology and characteristics of the starting substrate. Furthermore, the process is applicable to optical elements of the EUV projection optics system that have reflective Mo/Si mirrors of various shapes.

Paper Details

Date Published: 27 December 2002
PDF: 5 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468106
Show Author Affiliations
Pawitter J. S. Mangat, Motorola Labs (United States)
A. Alec Talin, Motorola, Inc. (United States)
Sandia National Labs. (United States)
Andrew F. Hooper, Motorola, Inc. (United States)
Diana Convey, Motorola, Inc. (United States)
Sang-In Han, Motorola, Inc. (United States)
James R. Wasson, Motorola, Inc. (United States)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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