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Proceedings Paper

Fogging effect consideration in mask process at 50-KeV e-beam systems
Author(s): Seung-Hune Yang; Yo-Han Choi; Jong-Rak Park; Yong-Hoon Kim; Sung-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn
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Paper Abstract

To achieve higher resolution and critical dimension (CD) accuracy in mask fabrication, 50KeV E-beam systems are used widely. However, as a high acceleration system is adapted, the degree of fogging effect caused by multi-scattering electrons becomes more serious. Although considerable efforts have been made, fogging effect cannot be removed perfectly, therefore several compensation techniques are applied instead. Fogging effect not only deteriorates CD uniformity but also makes mean to target (MTT) control difficult. Moreover, Fogging effect causes proximity effect correction (PEC) error according to PEC methods such as dose modulation type usually used in variable shaped beam (VSB) system and GHOST type commonly used in Gaussian beam system. In this paper, we investigated the fogging effect under the various exposure conditions at raster scan Gaussian beam system and VSB system experimentally and analytically.

Paper Details

Date Published: 27 December 2002
PDF: 6 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468100
Show Author Affiliations
Seung-Hune Yang, Samsung Electronics Co., Ltd. (South Korea)
Yo-Han Choi, Samsung Electronics Co., Ltd. (South Korea)
Jong-Rak Park, Samsung Electronics Co., Ltd. (South Korea)
Yong-Hoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Sung-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Hee-Sun Yoon, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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