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Proceedings Paper

Application of Cr-less mask technology for sub-100-nm gate with single exposure
Author(s): Sung-Hyuck Kim; Dong-Hoon Chung; Ji-Soong Park; In-Kyun Shin; Seong-woon Choi; Jung-Min Sohn; Jae-Han Lee; Hye-Soo Shin; J. Fung Chen; Douglas Van Den Broeke
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Paper Abstract

Chrome Less phase lithography (CPL) may be the crucial technology to print 100nm node and below. CPL can apply to various design layers without causing phase conflicts, while phase edge phase shift mask (PEPSM) is beneficial for specific pattern configurations and pitches. Therefore, we tested the feasibility of CPL including phase grating and hybrid CPL. And we tested the two types of CPL such as mesa and trench structures to decide the proper shifter forming method. We evaluated pattern fidelity of CPL using simulation, aerial image measurement system (AIMS) and wafer printing. Finally, we will compare the optical performance between CPL and PEPSM for 100nm node SRAM gate.

Paper Details

Date Published: 27 December 2002
PDF: 11 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468097
Show Author Affiliations
Sung-Hyuck Kim, Samsung Electronics Co., Ltd. (South Korea)
Dong-Hoon Chung, Samsung Electronics Co., Ltd. (South Korea)
Ji-Soong Park, Samsung Electronics Co., Ltd. (South Korea)
In-Kyun Shin, Samsung Electronics Co., Ltd. (South Korea)
Seong-woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)
Jae-Han Lee, Samsung Electronics Co., Ltd. (South Korea)
Hye-Soo Shin, Samsung Electronics Co., Ltd. (South Korea)
J. Fung Chen, ASML MaskTools, Inc. (United States)
Douglas Van Den Broeke, ASML Masktools, Inc. (United States)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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