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Proceedings Paper

PSM defect printability of extremely low-k1 sub-130-nm KrF lithography
Author(s): Won-Il Cho; Gisung Yeo; Seong-Yong Moon; Hee-Sun Yoon; Jung-Min Sohn
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Paper Abstract

As the design rule of semiconductor devices shrinks dramatically, the reticle defect detectability and its specification need to be more tighten than before. Moreover, the fact that most of critical layer from DRAM mass productions are processed with using PSM gives us high defect printability, which burdens the reticle inspection processes. To analyze the specification of PSM defect, the programmed defect test plate was designed and fabricated. The programmed defect test reticle contains some critical DRAM patterns with different design rules (150 nm to 110 nm node) for the low k1 KrF lithography. Various kinds of defect were programmed in the test reticle. After inspection of this test plate and wafer exposure, the results of detectability and those of printability were compared and the defect printability dependency on design rule and wafer illumination conditions was analyzed. Finally the PSM defect specification is derived from these results for sub 130 nm KrF lithography.

Paper Details

Date Published: 27 December 2002
PDF: 7 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.468095
Show Author Affiliations
Won-Il Cho, Samsung Electronics Co., Ltd. (South Korea)
Gisung Yeo, Samsung Electronics Co., Ltd. (South Korea)
Seong-Yong Moon, Samsung Electronics Co., Ltd. (South Korea)
Hee-Sun Yoon, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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