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Proceedings Paper

100-mW high-power three-section tunable distributed Bragg reflector laser diodes with a real refractive-index-guided self-aligned structure
Author(s): Toru Takayama; Atsunori Mochida; Kenji Orita; Satoshi Tamura; Toshikazu Ohnishi; Masaaki Yuri; Hirokazu Shimizu
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Paper Abstract

High-power (>100mW) 820 nm-band distributed Bragg reflector (DBR) laser diodes (LDs) with stable fundamental transverse mode operation and continuous wavelength tuning characteristics have been developed. To obtain high-power LDs with a stable fundamental transverse mode in 820 nm wavelength range, an AlGaAs narrow stripe (2.0 micrometers ) real refractive-index-guided self-aligned (RISA) structure is utilized. In the RISA structure, the index step between inside and outside the stripe region ((Delta) n) can be precisely controlled in the order of 10-3). To maintain a stable fundamental transverse mode up to an output power over 100 mW, (Delta) n is designed to be 4x10-3. Higher-order transverse modes are effectively suppressed by a narrow stripe geometry. Further, to achieve continuous wavelength tuning capability, the three-section LD structure, which consists of the active (700micrometers ), phase control (300micrometers ), and DBR(500micrometers ) sections, is incorporated. Our DBR LDs show a maximum output power over 200mW with a stable fundamental transverse mode, and wavelength tuning characteristics ((Delta) (lambda) ~2nm) under 100 mW CW operation.

Paper Details

Date Published: 22 May 2002
PDF: 10 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467965
Show Author Affiliations
Toru Takayama, Matsushita Electric Industrial Co., Ltd. (Japan)
Atsunori Mochida, Matsushita Electric Industrial Co., Ltd. (Japan)
Kenji Orita, Matsushita Electric Industrial Co., Ltd. (Japan)
Satoshi Tamura, Matsushita Electric Industrial Co., Ltd. (Japan)
Toshikazu Ohnishi, Matsushita Electric Industrial Co., Ltd. (Japan)
Masaaki Yuri, Matsushita Electric Industrial Co., Ltd. (Japan)
Hirokazu Shimizu, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

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