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Proceedings Paper

High-performance 1.32-um GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy
Author(s): Wei Li; Chang Si Peng; Tomi Jouhti; Janne Konttinen; Emil-Mihai Pavelescu; Mikko Suominen; Mihail M. Dumitrescu; Markus Pessa
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Paper Abstract

We report on the growth of GaInNAs materials and lasers by molecular beam epitaxy (MBE) using a rf-plasma source. Optimal GaInNAs quantum well (QW) structures have been designed and grown in order to achieve the brightest and narrowest photoluminescence (PL) spectra beyond 1.30 um. State-of-the-art GaInNAs/GaAs SQW lasers operating at 1.32 um have been demonstrated. For a broad area oxide stripe, uncoated Fabry-Perot laser with a cavity length of 1600 um, the threshold current density is 546 A/cm2 at room temperature. Optical output up to 40 mW per facet under continuous wave operation was achieved for these uncoated lasers at room temperature.

Paper Details

Date Published: 22 May 2002
PDF: 6 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467961
Show Author Affiliations
Wei Li, Tampere Univ. of Technology (Finland)
Chang Si Peng, Tampere Univ. of Technology (Finland)
Tomi Jouhti, Tampere Univ. of Technology (Finland)
Janne Konttinen, Tampere Univ. of Technology (Finland)
Emil-Mihai Pavelescu, Tampere Univ. of Technology (Finland)
Mikko Suominen, Tampere Univ. of Technology (Finland)
Mihail M. Dumitrescu, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

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