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Proceedings Paper

High-power 400-nm AlGaInN/650-nm AlGaInP semiconductor lasers
Author(s): Shiro Uchida; Satoru Kijima; Shinichi Ansai; Tsuyoshi Tojyo; Katsuyoshi Shibuya; Shinroh Ikeda; Takashi Mizuno; Motonubu Takeya; Syu Goto; Takeharu Asano; Masao Ikeda
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Paper Abstract

We have successfully developed GaInN-based 400nm lasers for DVR-blue systems and GaInP-based 650nm lasers for DVD+/- RW systems. The high-performance blue-violet laser developed here has low relative intensity noise (RIN) of -128 dB/Hz, low aspect ratio of 2.3, and a nominal lifetime of 15000 h at 60 degree(s)C and 30 mW output power. The 650nm red laser was developed for DVD+/- RW systems, which require red lasers with output power exceeding 90 mW in order to increase the data transfer speed. The high-power red lasers developed here are capable of 90 to 120 mW output power with high reliability at 60 to 70 degree(s)C and have a low aspect ratio of 2.3.

Paper Details

Date Published: 22 May 2002
PDF: 8 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467960
Show Author Affiliations
Shiro Uchida, Sony Shiroishi Semiconductor, Inc. (Japan)
Satoru Kijima, Sony Shiroishi Semiconductor, Inc. (Japan)
Shinichi Ansai, Sony Shiroishi Semiconductor, Inc. (Japan)
Tsuyoshi Tojyo, Sony Shiroishi Semiconductor, Inc. (Japan)
Katsuyoshi Shibuya, Sony Shiroishi Semiconductor, Inc. (Japan)
Shinroh Ikeda, Sony Shiroishi Semiconductor, Inc. (Japan)
Takashi Mizuno, Sony Shiroishi Semiconductor, Inc. (Japan)
Motonubu Takeya, Sony Shiroishi Semiconductor, Inc. (Japan)
Syu Goto, Sony Shiroishi Semiconductor, Inc. (Japan)
Takeharu Asano, Sony Shiroishi Semiconductor, Inc. (Japan)
Masao Ikeda, Sony Shiroishi Semiconductor, Inc. (Japan)


Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

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