Share Email Print
cover

Proceedings Paper

Influence of intraband relaxation processes on threshold and power-current characteristics of semiconductor lasers
Author(s): Georgy G. Zegrya; Natalya A. Gunko; Eugen B. Dogonkin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The effect of carrier-carrier relaxation and carrier - phonon relaxation on threshold characteristics of quantum well (QW) lasers is studied. Carrier relaxation time considerably depends on temperature, carrier density, and quantum well width. It is shown that in this case the gain coefficient becomes a more pronounced function of temperature and carrier density.

Paper Details

Date Published: 22 May 2002
PDF: 5 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467955
Show Author Affiliations
Georgy G. Zegrya, A.F. Ioffe Physico-Technical Institute (Russia)
Natalya A. Gunko, A.F. Ioffe Physico-Technical Institute (Russia)
Eugen B. Dogonkin, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

© SPIE. Terms of Use
Back to Top