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Proceedings Paper

Achieving spatial coherence in broad-area lasers using transverse-gain tailoring techniques
Author(s): John A. Houlihan; James R. O'Callaghan; Vincent Voignier; Guillaume Huyet; John Gerard McInerney; Brian Corbett
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Paper Abstract

We present a simple broad area semiconductor laser which uses a current spreading layer to modify the transverse gain profile. The device exhibits excellent spatial coherence to total output powers of 2.5 W under pulsed operation. Devices have been focused down to a spot size of approximately 5 micrometers FWHM at 2.5 W with the beam profile and position remaining stable over the entire range of operation. Under CW operation, thermal effects reduce spatial coherence leading to a significantly increased spot size and loss of beam stability. This work demonstrates the advantages of modifying the transverse gain profile and how it can be used to produce high brightness devices required for single mode fiber coupling.

Paper Details

Date Published: 22 May 2002
PDF: 6 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467953
Show Author Affiliations
John A. Houlihan, National Univ. of Ireland/Cork (Ireland)
James R. O'Callaghan, National Univ. of Ireland/Cork (Ireland)
Vincent Voignier, National Univ. of Ireland/Cork (Germany)
Guillaume Huyet, National Univ. of Ireland/Cork (Ireland)
John Gerard McInerney, Novalux, Inc. (United States)
Brian Corbett, National Microelectronics Research Ctr. (Ireland)

Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

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