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Proceedings Paper

Mid-infrared photonic-crystal distributed-feedback lasers with improved spectral and far-field characteristics
Author(s): Christopher L. Felix; William W. Bewley; Igor Vurgaftman; Robert E. Bartolo; James R. Lindle; Jerry R. Meyer; Hao Lee; Ramon U. Martinelli
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Paper Abstract

Photonic-crystal distributed-feedback (PCDFB) lasers, in which the DFB grating is defined on a two-dimensional lattice, have the potential to provide near-diffraction-limited, spectrally pure sources of radiation. The conventional 1D DFB laser and also the angled-grating DFB (a-DFB) laser are special cases of the PCDFB geometry. For a first proof-of-principle demonstration, optical lithography and dry etching were used to pattern a 2nd-order two-dimensional rectangular lattice whose grating was tilted by 20 degree(s) relative to the facet normal. The antimonide type-II W active region emitted at (lambda) = 4.6-4.7 micrometers . For pulsed optical pumping, the emission line was much narrower (7-10 nm) than those of Fabry-Perot and (alpha) -DFB lasers fabricated from the same wafer, and the beam quality was enhanced by as much as a factor of 5 compared with the (alpha) -DFB. The observation of two distinct lines in the PCDFB spectrum is attributed to a near-degeneracy of grating resonances at two different symmetry points of the Brillouin zone for the rectangular lattice. Quantum-cascade (QC) PCDFB lasers are shown to be particularly attractive in the mid-IR spectral range since their linewidth enhancement factor, which governs the carrier-induced refractive index change, is close to zero. Using a time-domain Fourier-transform algorithm, we estimate that rectangular-lattice QC lasers should emit in a single mode up to a stripe width of approximately equals may be employed to maintain spectral and spatial coherence over stripes as wide as 3 mm.

Paper Details

Date Published: 22 May 2002
PDF: 12 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467952
Show Author Affiliations
Christopher L. Felix, Naval Research Lab. (United States)
William W. Bewley, Naval Research Lab. (United States)
Igor Vurgaftman, Naval Research Lab. (United States)
Robert E. Bartolo, Naval Research Lab. (United States)
James R. Lindle, Naval Research Lab. (United States)
Jerry R. Meyer, Naval Research Lab. (United States)
Hao Lee, Sarnoff Corp. (United States)
Ramon U. Martinelli, Sarnoff Corp. (United States)

Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

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