Share Email Print
cover

Proceedings Paper

Novel hybrid III-V/II-VI mid-infrared laser structures with high asymmetric band offset confinements
Author(s): Yury P. Yakovlev; Sergey V. Ivanov; Konstantin D. Moiseev; Andrei M. Monakhov; Victor A. Solov'ev; Irina V. Sedova; Yakov V. Terent'ev; Alexei A. Toropov; Maya P. Mikhailova; Boris Ya. Meltzer; Petr S. Kop'ev
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present a novel hybrid laser structure based on III-V and II-VI compounds combining some advantages of type I and type II heterojunctions in one heterostructure. Such design allows the achievement of large energy offsets at the interface in the conduction and the valence band exceeding of 1.0 eV in order to provide good electron and hole confinement. P-AlAsSb/n-InAs/N-Cd(Mg)Se laser heterostructures were grown on p-InAs substrates by original technology of MBE method in two separate growth chambers consequently. Photoluminescence spectra included tow emission bands at hv=0.41 eV and hv=2.08 eV associated with InAs and CdMgSe bulk recombination transitions, respectively. Intense electroluminescence was observed at (lambda) =2.73micrometers (77K) and (lambda) =3.12micrometers (300K). Weak temperature dependence of spontaneous emission indicated the effective carrier confinement in the InAs layer due to large potential barriers ((Delta) sEc=1.28eV and (Delta) EV=1.68eV). Proposed hybrid III-V/II-VI heterostructure is very promising for creation the mid-infrared lasers with improved performances operating in the spectral range of 3- 5micrometers .

Paper Details

Date Published: 22 May 2002
PDF: 8 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467948
Show Author Affiliations
Yury P. Yakovlev, A.F. Ioffe Physico-Technical Institute (Russia)
Sergey V. Ivanov, A.F. Ioffe Physico-Technical Institute (Russia)
Konstantin D. Moiseev, A.F. Ioffe Physico-Technical Institute (Russia)
Andrei M. Monakhov, A.F. Ioffe Physico-Technical Institute (Russia)
Victor A. Solov'ev, A.F. Ioffe Physico-Technical Institute (Russia)
Irina V. Sedova, A.F. Ioffe Physico-Technical Institute (Russia)
Yakov V. Terent'ev, A.F. Ioffe Physico-Technical Institute (Russia)
Alexei A. Toropov, A.F. Ioffe Physico-Technical Institute (Russia)
Maya P. Mikhailova, A.F. Ioffe Physico-Technical Institute (Russia)
Boris Ya. Meltzer, A.F. Ioffe Physico-Technical Institute (Russia)
Petr S. Kop'ev, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

© SPIE. Terms of Use
Back to Top