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Proceedings Paper

Type-II diode lasers based on interface recombination at 3.3um
Author(s): Anthony Krier; Derek A. Wright; Victoria J. Ellarby; Victor V. Sherstnev; Konstantin D. Moiseev; Yury P. Yakovlev
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Paper Abstract

There is considerable interest in the realization of room temperature mid-infrared diode lasers for a variety of applications, including remote gas sensing, infrared countermeasures and molecular spectroscopy. However the maximum temperature of operation in narrow gap III-V component alloys is limited by strong non-radiative Auger recombination and various band structure engineering techniques are being investigated to provide Auger suppression. In our work we are investigating the possibility of obtaining a practical 3.3micrometers laser by making use of radiative recombination across single type II hetero-interfaces. Because transitions occur between confined electron and hole states localized on either side of the heterojunction where the potential wells are triangular, there exists the possibility of tailoring the wave-function overlap to give good Auger suppression while still maintaining high radiative output. At the same time growth form the liquid phase offers potentially lower SRH recombination. We compared two such heterojunctions (InAs0.94Sb0.06/InAs and Ga0.96In0.04As0.11Sb0.89/ InAs) grown by rapid slider LPE and report on the photoluminescence and electroluminescence from the interfaces. The dependence of these interface transitions on temperature, excitation intensity, band offset and polarization is reported, with a view towards incorporating these in the active region of a practical laser.

Paper Details

Date Published: 22 May 2002
PDF: 10 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467947
Show Author Affiliations
Anthony Krier, Lancaster Univ. (United Kingdom)
Derek A. Wright, Lancaster Univ. (United Kingdom)
Victoria J. Ellarby, Lancaster Univ. (United Kingdom)
Victor V. Sherstnev, A.F. Ioffe Physico-Technical Institute (United Kingdom)
Konstantin D. Moiseev, A.F. Ioffe Physico-Technical Institute (Russia)
Yury P. Yakovlev, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

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