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Proceedings Paper

Gain and carrier-induced refractive index change in group-III nitride quantum wells
Author(s): Weng W. Chow; Hans Christian Schneider
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Paper Abstract

This paper analyses the gain and carrier-induced refractive index change in group-III nitride quantum wells. An approach based on the semiconductor Bloch equations with carrier-carrier collisions treated at the level of quantum kinetic theory is used. The influences of the strong carrier-carrier Coulomb interaction and the quantum-confined Stark effect on laser threshold and output beam quality are discussed.

Paper Details

Date Published: 22 May 2002
PDF: 7 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467943
Show Author Affiliations
Weng W. Chow, Sandia National Labs. (United States)
Hans Christian Schneider, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

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