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Proceedings Paper

Reducing temperature dependence of semiconductor lasers using nonidentical multiple quantum wells
Author(s): Ching-Fuh Lin; Yi-Shin Su; Di-Ku Yu; Bing-Ruey Wu
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Paper Abstract

Semiconductor lasers with InGaAsP/InP nonidentical multiple quantum wells (MQWs) for optical communication are experimented to show the improved temperature characteristics. With proper layout of the nonidentical MQWs, the characteristic temperature of the laser diodes is increased. Also, the differential quantum efficiency increases to around 40% for the temperature increasing from 30 degree(s)C to 40 degree(s)C and approximately remains at this value for temperature above 40 degree(s)C. The reason is attributed to the carrier redistribution in the nonidentical MQWs as temperature increases. The change in temperature causes certain QWs to have increased carriers. Therefore their corresponding gain increases to overcome other effects that degrade temperature characteristics. With proper design of nonidentical MQWs, significant improvement on temperature characteristics of semiconductor lasers is possible.

Paper Details

Date Published: 22 May 2002
PDF: 9 pages
Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); doi: 10.1117/12.467941
Show Author Affiliations
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)
Yi-Shin Su, National Taiwan Univ. (Taiwan)
Di-Ku Yu, National Taiwan Univ. (Taiwan)
Bing-Ruey Wu, Chunghua Telecom Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 4651:
Novel In-Plane Semiconductor Lasers
Jerry R. Meyer; Claire F. Gmachl, Editor(s)

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