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Proceedings Paper

Improvement of NLD mask dry etching system for 100-nm-node technology
Author(s): Yoshiyuki Tanaka; Nobuyuki Yoshioka; Noriyuki Harashima; Takaei Sasaki; Kiyoshi Kuwahara; Toshio Hayashi; Mutsumi Hara; Yasushi Ohkubo
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Paper Abstract

The advanced photomask dry etching system using neutral loop discharge (NLD) has been thought as a promising candidate for the next generation technology, because the NLD plasma has a capability to control the plasma distribution and density. In previous work, we improved CD uniformity for 130nm node technology using the neutral loop modulation etching technique. However, 100nm node lithography requires tighter specification, thus we set a target to achieve CD accuracy of 6nm (3 sigma) by improving CD uniformity and loading effect of the NLD dry etching system. First, we changed the system configuration: exhaust place, reactor size, and electrode shape. Especially, by optimizing the antenna configuration, we improved the unevenly distributed plasma. Additionally, we introduced a new etching technique to reduce CD shift from resist profiles by enhancing Cr/Resist sensitivity. Consequently, the NLD dry etching system for 100nm node technology was confirmed the effectiveness to improve CD performance using the above techniques.

Paper Details

Date Published: 27 December 2002
PDF: 7 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467914
Show Author Affiliations
Yoshiyuki Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Nobuyuki Yoshioka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Noriyuki Harashima, ULVAC Coating Corp. (Japan)
Takaei Sasaki, ULVAC Coating Corp. (Japan)
Kiyoshi Kuwahara, ULVAC Inc. (Japan)
Toshio Hayashi, ULVAC Inc. (Japan)
Mutsumi Hara, HOYA Corp. (Japan)
Yasushi Ohkubo, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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