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Proceedings Paper

90-nm-node CD uniformity improvement using a controlled gradient temperature CAR PEB process
Author(s): Dong-Il Park; Soon-Kyu Seo; Eu-Sang Park; Jong-Hwa Lee; Woo-Gun Jeong; Jin-Min Kim; Sang-Soo Choi; Soo-Hong Jeong
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Paper Abstract

Writing fogging effect in chemically amplified resist process makes critical effect on global CD distribution in the advanced 90nm node photomask with higher pattern density and smaller geometries. High contrast feature of chemically amplified resist makes difficult to correct the global CD uniformity in resist develop process compared with conventional ZEP resist. In this paper we examine the fogging effect in the combination chemically amplified resist with 50KeV writing tool and the consequential problem for production mask with higher pattern density. We will present the feasibility of the global CD uniformity correction technique in post exposure baking process using gradient temperature hotplate.

Paper Details

Date Published: 27 December 2002
PDF: 7 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467905
Show Author Affiliations
Dong-Il Park, Photronics-PKL (South Korea)
Soon-Kyu Seo, Photronics-PKL (South Korea)
Eu-Sang Park, Photronics-PKL (South Korea)
Jong-Hwa Lee, Photronics-PKL (South Korea)
Woo-Gun Jeong, Photronics-PKL (South Korea)
Jin-Min Kim, Photronics-PKL (South Korea)
Sang-Soo Choi, Photronics-PKL (South Korea)
Soo-Hong Jeong, Photronics-PKL (South Korea)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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