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Proceedings Paper

Performance of repaired defects and attPSM in EUV multilayer masks
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Paper Abstract

The imaging performance of non-planar topographies in EUV masks for both partially repaired defects and non-planar attenuating phase-shifting masks made with repair treatments are evaluated using rigorous electromagnetic simulation with TEMPEST. Typical topographies produced by treatment techniques in the literature such as removal of top layers and compaction produced by electron-beam heating are considered. Isolated defects on/near the surface repaired by material removal are shown to result in an image intensity within 5% of the clear field value. Deeply buried defects within the multilayer treated by electron-beam heating can be repaired to 3% of the clear field but over repair can result in some degradation. Compaction from a 6.938 nm period to a 6.312 nm period shows a 540° phase-shift and an intensity reduced to about 6% suggesting such a treatment may be used to create attenuated phase-shifting masks for EUV. The quality of the aerial image for such a mask is studied as a function of the lateral transition distance between treated and untreated regions.

Paper Details

Date Published: 27 December 2002
PDF: 8 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467896
Show Author Affiliations
Yunfei Deng, Univ. of California/Berkeley (United States)
Bruno La Fontaine, Advanced Micro Devices Corp. (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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