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Proceedings Paper

Effects of alternating aperture PSM design on image imbalance for 65-nm technology
Author(s): Armen Kroyan; Hua-Yu Liu
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Paper Abstract

Over recent years, there has been a number of publications generally describing and characterizing the image imbalance phenomenon in phase shifting masks. In this work, we concentrate on the evaluation of various alternating aperture PSM design parameters and their impact on image imbalance in the context of the 65nm technology node. The study is based on rigorous electro-magnetic field (EMF) simulation of light scattering in 3D mask topographies using EM-Suite software from Panoramic Technology. Among evaluated design parameters are: Cr feature size, pattern pitch, shifter width bias, shifter height, and undercut size. Additionally, the correlation between the mask parameters and image imbalance is examined as a function of optical settings such as NA, sigma, defocus and the image threshold level.

Paper Details

Date Published: 27 December 2002
PDF: 10 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467852
Show Author Affiliations
Armen Kroyan, Numerical Technologies, Inc. (United States)
Hua-Yu Liu, Numerical Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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