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Proceedings Paper

Inspecting alternating phase-shift masks by matching stepper conditions
Author(s): Anja Rosenbusch; Shirley Hemar; Boaz Kenan
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Paper Abstract

The paper presents a new technology to inspect alternating phase shifting masks. Instead of finding defects based on a size-dependent defect specification, defects are found according to their impact at the wafer CD result. The inspection methodology used is aerial imaging. Phase effects are taking into account inherently. The main advantage of this method is that only defects, which actually affect the wafer result, will be detected and classified. The paper presents first inspection results on alternating phase shifting test masks designed for the 70nm generation.

Paper Details

Date Published: 27 December 2002
PDF: 6 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467781
Show Author Affiliations
Anja Rosenbusch, Etec Systems, Inc., An Applied Materials Co. (United States)
Shirley Hemar, Etec Systems, Inc., An Applied Materials Co. (Israel)
Boaz Kenan, Etec Systems, Inc., An Applied Materials Co.. (Israel)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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