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Proceedings Paper

Aerial-image-based inspection of binary (OPC) and embedded-attenuated PSM
Author(s): Felix Chang; Chang-Cheng Hung; John C.H. Lin; Anja Rosenbusch; Reuven Falah; Shirley Hemar
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Paper Abstract

The paper presents a revolutionary technology to inspect advanced contact layers. Instead of finding defects based on a size-dependent defect specification, defects are found according to their impact at the wafer CD result. The inspection methodology used is aerial imaging. The main advantage of this method is that only defects, which actually affect the wafer result, will be detected and classified. The paper presents first inspection results on contact layers designed for the 130nm and 90 nm technology node.

Paper Details

Date Published: 27 December 2002
PDF: 8 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467767
Show Author Affiliations
Felix Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chang-Cheng Hung, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
John C.H. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anja Rosenbusch, Etec Systems, Inc., An Applied Materials Co. (United States)
Reuven Falah, Etec Systems, Inc., An Applied Materials Co. (Israel)
Shirley Hemar, Etec Systems, Inc., An Applied Materials Co. (Israel)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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