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Proceedings Paper

Imaging 100-nm contacts with high-transmission attenuated phase-shift masks
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Paper Abstract

This study explores the capability of printing 100 nm contacts through the use of 9% and 15% attenuated phase shift masks and a 0.75 NA 193 nm scanner. The mask designs targeted simultaneous solutions for 100 nm contacts at pitches from 200 nm to 300 nm. The two masks were successfully manufactured from experimental MoSiON embedded-attenuated phase shift mask (EAPSM) blanks. The 100 nm contacts were successfully printed with a depth of focus (DOF) from 0.1-0.7 μm. Overlapping process windows were not achieved but were possible upon adjustment of the mask biases. The observed mask error enhancement factor (MEEF) was approximately 3 for the 220 nm pitch. Side lobe printing was not observed for either mask.

Paper Details

Date Published: 27 December 2002
PDF: 11 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467763
Show Author Affiliations
James V. Beach, International SEMATECH (United States)
John S. Petersen, Petersen Advanced Lithography, Inc. (United States)
Benjamin George Eynon, Photronics Inc. (United States)
Darren Taylor, Photronics Inc. (United States)
Dave J. Gerold, Petersen Advanced Lithography, Inc. (United States)
Mark J. Maslow, Petersen Advanced Lithography, Inc. (United States)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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