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Critical dimension and image placement issues for step and flash imprint lithography templates
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Paper Abstract

Step and Flash Imprint Lithography (SFIL) is an attractive low-cost method for printing sub-100 nm geometries. Relative to other imprinting processes, SFIL has the advantage that the template is transparent thereby facilitating conventional overlay techniques. In addition, the imprint process is performed at low pressures and room temperature, which minimizes magnification and distortion errors. Since SFIL is a 1X lithography technique, the template masks will require very good layer-to-layer overlay accuracy for multiple level device fabrication. To fabricate a transparent SFIL template, processing techniques familiar to existing binary phase shift mask fabrication are utilized. However, in order to fabricate the sub-100 nm features necessary for SFIL templates, thinner resist and chromium are necessary. Initial resolution tests have resulted in features sizes down to ~20 nm with the non-chemically amplified resist, ZEP520. Template to template overlay of <15 nm (mean + 3σ) can be achieved if the template fabrication procedure consists of a single 1” template exposed in the center of a 6” × 6” × 0.25” quartz blank.

Paper Details

Date Published: 27 December 2002
PDF: 7 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467753
Show Author Affiliations
Kevin J. Nordquist, Motorola, Inc. (United States)
David P. Mancini, Motorola, Inc. (United States)
William J. Dauksher, Motorola, Inc. (United States)
Eric S. Ainley, Motorola, Inc. (United States)
Kathleen A. Gehoski, Motorola, Inc. (United States)
Douglas J. Resnick, Motorola, Inc. (United States)
Zorian S. Masnyj, Motorola, Inc. (United States)
Pawitter J. S. Mangat, Motorola, Inc. (United States)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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