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Proceedings Paper

Advanced CD linearity improvement for multiproject wafers and SoC at 95-nm technology node
Author(s): Jeremy Lu; Nicole L. Sandlin; Hidetoshi Sato; Colbert Lu; Nicole Cheng; Torey Huang; Clyde Su; Melisa J. Buie
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Paper Abstract

The continuous shrinking of design rules results in tighter specifications for linearity in advanced mask processing. Specifically, the increasing need for multiple devices on a single reticle set, e.g., multiproject wafers (MPWs) and systems on a chip (SoC), drives development in this area. Advanced masks were prepared with positive and negative chemically amplified resist (CAR) written on the Hitachi HL-950M. Post-exposure bake was performed in a double-sided proximity baking system; development was done using a spray-puddle method. Etch experiments were performed in the Etec Systems Tetra photomask etch chamber. Linearity measurements were performed using the Hitachi S-7840 CD SEM and the Leica LWM 250 DUV. Both clear and dark isolated and dense features were measured. The current work examines the impact of various etch process parameters (Cl2/O2 ratio, gas flow, pressure, source power) on CD linearity between 400 nm and 1.25 μm. A full factorial-designed orthogonal experiment was performed to determine the main effects and any interactions that might impact the linearity performance. Pressure and total flow showed a strong influence on linearity.

Paper Details

Date Published: 27 December 2002
PDF: 9 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467750
Show Author Affiliations
Jeremy Lu, Photronics-PSMC (Taiwan)
Nicole L. Sandlin, Etec Systems, Inc., An Applied Materials Co. (United States)
Hidetoshi Sato, Hitachi High-Technologies Co. (Japan)
Colbert Lu, Photronics-PSMC (Taiwan)
Nicole Cheng, Photronics-PSMC (Taiwan)
Torey Huang, Photronics-PSMC (Taiwan)
Clyde Su, Photronics-PSMC (Taiwan)
Melisa J. Buie, Etec Systems, Inc., An Applied Materials Co. (United States)

Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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