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Proceedings Paper

Comparison of endpoint methods in advanced photomask etch applications
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Paper Abstract

To achieve and eventually surpass the 90 nm design rules described in the ITRS roadmap, precise control of etch process endpoint is necessary. To this end, the authors have conducted a study comparing various photomask endpoint schemes, including reflectance laser endpoint, traditional optical emission spectroscopy (OES) endpoint, and OES endpoint employing various statistical techniques. A series of experiments were performed to determine the best combination of process and spectrometer to optimize the signal to noise ratio. Using this combination, a series of masks with exposed Cr loads ranging from 0.5% to 20% were etched. Sensitivity (represented by signal-to-noise ratio) and repeatability was analyzed for each endpoint technique. A discussion of the relative strengths and weaknesses of each technique is included.

Paper Details

Date Published: 27 December 2002
PDF: 10 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467749
Show Author Affiliations
David J. Johnson, Unaxis USA, Inc. (United States)
Jason Plumhoff, Unaxis USA, Inc. (United States)
Jong Shin, Unaxis USA, Inc. (United States)
Emmanuel Rausa, Unaxis USA, Inc. (United States)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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