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Proceedings Paper

Structural, optical, and electrical characterization of ZnO/Zn0.8Mg0.2O quantum wells for UV applications
Author(s): Agisilaos A. Iliadis; Soumya Krishnamoorthy; Wei Yang; Supab Choopun; R. D. Vispute; T. Venkatesan
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Paper Abstract

The structural, optical, and electrical characteristics of An0.8Mg0.2O/ZnO/Zn0.8Mg0.2O quantum well heterostructures, are reported. The structures consist of a ZnO quantum well, with thickness of 6 nm, 8 nm, or 50 nm, placed between two Zn0.8Mg0.2O barriers, with a thickness of 7nm. The epitaxial layers are grown by pulsed laser deposition (PLD) on c-cut sapphire substrates. Resonant tunneling action in the 6 nm and 8 nm width single quantum well has been observed. Negative differential resistance (NDR) peaks were evident at room temperature and at 200 K in this system for the first time. X-ray diffraction spectra showed high crystal quality, and pulsed photoluminescence measurements showed high quality hetero- interfaces with a FWHM of 5.6 meV at 77K. The photoluminescence (PL) transitions in the quantum wells occurred at wavelengths of 345.55 nm and 348.22nm for the 6 nm and 8 nm well width respectively. The current-voltage characteristics of the structures showed the negative differential resistance peaks at RT and 200 K, making this type of wide band-gap semiconductor material system a very promising system for applications both in electron transport and in UV detector devices.

Paper Details

Date Published: 21 May 2002
PDF: 8 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467677
Show Author Affiliations
Agisilaos A. Iliadis, Univ. of Maryland/College Park (United States)
Soumya Krishnamoorthy, Univ. of Maryland/College Park (United States)
Wei Yang, Univ. of Maryland/College Park (United States)
Supab Choopun, Univ. of Maryland/College Park (United States)
R. D. Vispute, Univ. of Maryland/College Park (United States)
T. Venkatesan, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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