Share Email Print
cover

Proceedings Paper

Structural, optical, and electrical characterization of ZnO/Zn0.8Mg0.2O quantum wells for UV applications
Author(s): Agisilaos A. Iliadis; Soumya Krishnamoorthy; Wei Yang; Supab Choopun; R. D. Vispute; T. Venkatesan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The structural, optical, and electrical characteristics of An0.8Mg0.2O/ZnO/Zn0.8Mg0.2O quantum well heterostructures, are reported. The structures consist of a ZnO quantum well, with thickness of 6 nm, 8 nm, or 50 nm, placed between two Zn0.8Mg0.2O barriers, with a thickness of 7nm. The epitaxial layers are grown by pulsed laser deposition (PLD) on c-cut sapphire substrates. Resonant tunneling action in the 6 nm and 8 nm width single quantum well has been observed. Negative differential resistance (NDR) peaks were evident at room temperature and at 200 K in this system for the first time. X-ray diffraction spectra showed high crystal quality, and pulsed photoluminescence measurements showed high quality hetero- interfaces with a FWHM of 5.6 meV at 77K. The photoluminescence (PL) transitions in the quantum wells occurred at wavelengths of 345.55 nm and 348.22nm for the 6 nm and 8 nm well width respectively. The current-voltage characteristics of the structures showed the negative differential resistance peaks at RT and 200 K, making this type of wide band-gap semiconductor material system a very promising system for applications both in electron transport and in UV detector devices.

Paper Details

Date Published: 21 May 2002
PDF: 8 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467677
Show Author Affiliations
Agisilaos A. Iliadis, Univ. of Maryland/College Park (United States)
Soumya Krishnamoorthy, Univ. of Maryland/College Park (United States)
Wei Yang, Univ. of Maryland/College Park (United States)
Supab Choopun, Univ. of Maryland/College Park (United States)
R. D. Vispute, Univ. of Maryland/College Park (United States)
T. Venkatesan, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top