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Proceedings Paper

GaAs PIN photodetectors for 10 Gbit/s data communication
Author(s): Lars Dillner; Roger Loow; Elsy Odling; Eva Backlin; Thomas Aggerstam
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Paper Abstract

For high speed data communication, Zarlink has developed GaAs PIN detectors with three different diameters of the apertures: 40 micrometers , 55 micrometers and 70 micrometers . To minimize the capacitance we have chosen to use a mesa structure on a semi-insulating substrate. At íV2 Volt bias the capacitances are 110 fF, 160 fF and 230 fF for the 40 micrometers , 55 micrometers and 70 micrometers detectors respectively. For all diameters the series resistance is about 5 (Omega) and the responsivities are 0.6 A/W. At-V10 Volt bias, the dark current is less than 100 pA. Link experiments show open eye diagrams at 10 Gbit/s for a 70 micrometers unamplified PIN detector, both at room temperature and at 90 degree(s)C.

Paper Details

Date Published: 21 May 2002
PDF: 5 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467664
Show Author Affiliations
Lars Dillner, Zarlink Semiconductor AB (Sweden)
Roger Loow, Zarlink Semiconductor AB (Sweden)
Elsy Odling, Zarlink Semiconductor AB (Sweden)
Eva Backlin, Zarlink Semiconductor AB (Sweden)
Thomas Aggerstam, Zarlink Semiconductor AB (Sweden)


Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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