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Proceedings Paper

Recent development in infrared FPAs with multispectral 128exp2 IRCMOS
Author(s): J. P. Baylet; Jean-Paul Zanatta; Damien Chance; Olivier Gravrand; Frederic Rothan; Eric De Borniol; Pierre Castelein; Jean-Paul Chamonal; Michel Ravetto; Gerard L. Destefanis
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Paper Abstract

In this paper we present a status of the activity of the LETI infrared laboratory in the field of HgCdTe infrared multispectral detectors. The multilayer doped structures needed to achieve two color pixels are grown by molecular beam epitaxy (MBE) (211)HgCdTe on lattice matched CdZnTe substrates. The device structure is n+ppn and is spatially coherent. The long wavelength layer is a planar like n+/p diode and is made by ion implantation while the shorter wavelength p-n diode is made in-situ during the MBE growth using Indium impurity doping. The last junction is isolated by mesa etch. The detectors are interconnected by indium bumps to a CMOS readout circuit. One or two indium bumps per pixel are used to address sequentially or simultaneously the two wavelengths, the detector pitch being 50micrometers or 60micrometers respectively. Elementary detectors exhibit performances in each band which are very close to those obtained in single color detectors with our standard technology. The Si-CMOS read-out circuits are specially designed to optimize the best performance of the IRCMOS focal plane arrays (FPA) in both wavelengths. The electro-optical performances of a two color IRCMOS FPA with a complexity of 128x128 pixels (pitch of 50micrometers ) operating sequentially within the (3-5micrometers ) middle wavelength infrared range (MWIR) at 77K will be presented.

Paper Details

Date Published: 21 May 2002
PDF: 10 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467655
Show Author Affiliations
J. P. Baylet, CEA-LETI (France)
Jean-Paul Zanatta, CEA-LETI (France)
Damien Chance, CEA-LETI (France)
Olivier Gravrand, CEA-LETI (France)
Frederic Rothan, CEA-LETI (France)
Eric De Borniol, CEA-LETI (France)
Pierre Castelein, CEA-LETI (France)
Jean-Paul Chamonal, CEA-LETI (France)
Michel Ravetto, CEA-LETI (France)
Gerard L. Destefanis, CEA-LETI (France)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

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