Share Email Print

Proceedings Paper

Future of AlxGa1-xN materials and device technology for ultraviolet photodetectors
Author(s): Patrick Kung; Alireza Yasan; Ryan McClintock; Shaban Darvish; Kan Mi; Manijeh Razeghi
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Thanks to advances in the quality of wide bandgap AlxGa1-xN semiconductors, these materials have emerged as the most promising approach for the realization of photon detectors operating in the near ultraviolet from 200 to 365 nm. This has in turn spurred the need for such devices in an increasing number of applications ranging from water purification to early missile threat warning systems. Nevertheless, the control of the material quality and doping, and the device technology remain tremendous challenges in the quest for the realization of high performance photodetectors. Design of the photodetector structure is one of the key issues in obtaining high performance devices; especially the thickness of the intrinsic region for p-i-n photodiodes is a crucial value and needs to be optimized. We compare the performance of the p-i-n photodiodes with different widths for the depletion region, which shows a trade-off between speed and responsivity of the devices. Furthermore, another challenge at present is the realization of low resistivity wide bandgap p-type AlxGa1-xN semiconductors. We present here recent advances and propose future research efforts in the enhancement of the AlxGa1-xN p-type conductivity through the use of polarization fields in AlxGa1-xN/GaN superlattice structures.

Paper Details

Date Published: 21 May 2002
PDF: 8 pages
Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); doi: 10.1117/12.467650
Show Author Affiliations
Patrick Kung, Northwestern Univ. (United States)
Alireza Yasan, Northwestern Univ. (United States)
Ryan McClintock, Northwestern Univ. (United States)
Shaban Darvish, Northwestern Univ. (United States)
Kan Mi, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 4650:
Photodetector Materials and Devices VII
Gail J. Brown; Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top