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Proceedings Paper

Evaluation of a high-resolution negative-acting electron-beam resist GMC for photomask manufacturing
Author(s): Wen-Chih Chen; Anthony E. Novembre
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Paper Abstract

As mask and reticle designs continue to evolve in complexity and resolution requirements, maskmakers are investigating what advantages negative acting electron beam resists may have in meeting these requirements. One candidate is Poly (glycidyl methacrylate-co-3- chlorostyrene), GMC, which is an advanced negative resist used for the purpose of photomask fabrication. In this paper, a statistically designed experiment will be described in which GMC resist was evaluated for use on the MEBES system. Variables explored included exposure dosage, chrome etch time, resist descum and strip time. The effects of these variables on defect density, critical dimension (CD) size and uniformity will be presented.

Paper Details

Date Published: 1 March 1991
PDF: 18 pages
Proc. SPIE 1496, 10th Annual Symp on Microlithography, (1 March 1991); doi: 10.1117/12.46759
Show Author Affiliations
Wen-Chih Chen, Du Pont Photomasks, Inc. (United States)
Anthony E. Novembre, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1496:
10th Annual Symp on Microlithography
James N. Wiley, Editor(s)

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