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Proceedings Paper

Improving feature-size linearity for alternating phase-shift mask applications utilizing a next-generation ICP source
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Paper Abstract

Alternating Aperture Phase Shift Photomask (AAPSM) technology becomes more critical as the industry approaches 90nm design rules. AAPSM enables the lithographic process to extend the viability of deep ultraviolet (DUV) photolithography systems. However, manufacturing high quality AAPS masks is difficult due to the stringent requirements placed on the etch process. Dry etch processes for alternating aperture masks must have good intra-mask phase uniformity, high Quartz/Cr selectivity, and vertical side-wall profile. While maintaining these parameters, it is also necessary for the process to achieve etch depth linearity across a range of feature sizes. Using a next generation Inductively Coupled Plasma (ICP), a series of experiments were performed to optimize the quartz etch process to improve feature size etch depth linearity and selectivity to resist. Etch results from an optimized solution are presented.

Paper Details

Date Published: 27 December 2002
PDF: 5 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467580
Show Author Affiliations
Jong Shin, Unaxis USA, Inc. (United States)
Chris Constantine, Unaxis USA, Inc. (United States)
Jason Plumhoff, Unaxis USA, Inc. (United States)
Emmanuel Rausa, Unaxis USA, Inc. (United States)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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