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Proceedings Paper

E-beam data compaction method for large-capacity mask ROM production
Author(s): Toyomi Kanemaru; Takashi Nakajima; Tadanao Igarashi; Rika Masuda; Nobuyuki Orita
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Paper Abstract

Mask ROMs are one of the most advanced devices commercially available today. 4 Mbit DRAMs are just coming to the market, where 32 Mbit and 64 Mbit Mask ROM products also are entering the market. The code mask of Mask ROM consists, of a random distribution of repeated cells on a constant grid, so it is difficult to use conventional e-beam data compaction techniques for the code mask level of a Mask ROM. As mask ROM capacity and their mask exposure data volumes increase, the e-beam data processing time for these devices also has increased even with enhanced computational speeds of new mainframe computers. To overcome this problem, we have adopted a new e-beam data compaction technique. With this ne technique of a data compaction, data conversion times on a mainframe computer (ACOS) are substantially shorted and data volume is reduced by as much as a factor of one hundred. Using this new data format, the data volume of a variable shaped vector scan e-beam exposure system became far smaller compared with a spot beam raster scan e-beam system.

Paper Details

Date Published: 1 March 1991
PDF: 6 pages
Proc. SPIE 1496, 10th Annual Symp on Microlithography, (1 March 1991); doi: 10.1117/12.46755
Show Author Affiliations
Toyomi Kanemaru, NEC Corp. (Japan)
Takashi Nakajima, NEC Corp. (Japan)
Tadanao Igarashi, NEC Corp. (Japan)
Rika Masuda, NEC Corp. (Japan)
Nobuyuki Orita, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 1496:
10th Annual Symp on Microlithography
James N. Wiley, Editor(s)

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