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Proceedings Paper

Alt-PSM of contact with phase-assist feature for 65-nm node
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Paper Abstract

Resolving the very small feature size of contact holes for 65-nm technology node has placed enormous challenge on even the up-to-date optical lithography techniques. Resolution enhancement technique (RET) will be helpful and necessary to alleviate the strain posed by such a task. Here we report that a 193-nm alternating phase shift mask (Alt-PSM) with phase-shifted assist features is used to print the contact holes for 65-nm node. With a novel algorithm of phase assignment, the phases of the main features are assigned properly in the full chip with the assistant features added. The results show that DOF of 110-nm iso-contact hole can be enhanced up to 0.5 μm.

Paper Details

Date Published: 27 December 2002
PDF: 10 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467499
Show Author Affiliations
Jan-Wen You, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jaw-Jung Shin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chung-Hsing Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Li-Wei Kung, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Bin-Chang Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chang-Min Dai, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tsai-Sheng Gau, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Burn Jeng Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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