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Proceedings Paper

Large intersubband nonlinearity for all-optical switching at 1.72 micron in Sb-based quantum wells
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Paper Abstract

Based on our line shape analysis of temperature dependent absorption spectra on InGaAs/AlAsSb single quantum wells, we expect a fast carrier redistribution with in the broad inhomogeneous intersubband absorption spectrum from a wavelength as short as 1.72 micrometers . In addition, due to large resonant 3rd order susceptibility but weak absorption, we expect small saturation intensity (Is) at this short wavelength. We present wavelength dependent saturation measurements to show that the Is is, indeed, lower by more than an order of magnitude compared to that at the main peak (1.88 micrometers ). We also show from the figure of merit estimates that the carrier relaxation time at 1.72 micrometers is expected to be faster at 1.72 micron, consistent with the line shape analysis predictions.

Paper Details

Date Published: 14 May 2002
PDF: 9 pages
Proc. SPIE 4638, Optical Devices for Fiber Communication III, (14 May 2002); doi: 10.1117/12.467468
Show Author Affiliations
A. V. Gopal, Femtosecond Technology Research Association and New Energy and Industrial Technology Devel (Japan)
Haruhiko Yoshida, Femtosecond Technology Research Association (Japan)
Arup Neogi, Femtosecond Technology Research Association, New Energy and Industrial Technology Developm (United States)
Teruo Mozume, Femtosecond Technology Research Association (Japan)
Nikolai Georgiev, Femtosecond Technology Research Association and New Energy and Industrial Technology Devel (Japan)
Takasi Simoyama, Femtosecond Technology Research Association (Japan)
Osamu Wada, Femtosecond Technology Research Association and Kobe Univ. (Japan)
Hiroshi Ishikawa, Femtosecond Technology Research Association (Japan)


Published in SPIE Proceedings Vol. 4638:
Optical Devices for Fiber Communication III
Michel J. F. Digonnet, Editor(s)

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