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Proceedings Paper

Aerial image measurement system for 157-nm lithography
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Paper Abstract

The worldwide first Aerial Image Measurement System (AIMS) for 157 nm lithography has been used to measure binary chrome and attenuated phase shift masks at 157 nm wavelength. The AIMS measurements were done for line structures from 200 nm up to 400 nm and for 500 nm contacts. Through focus series have been conducted to calculate the process windows for various structures and feature sizes.

Paper Details

Date Published: 27 December 2002
PDF: 9 pages
Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); doi: 10.1117/12.467353
Show Author Affiliations
Klaus Eisner, Infineon Technologies AG (Germany)
Peter Kuschnerus, Carl Zeiss Microelectronic Systems GmbH (Germany)
Jan-Peter Urbach, International SEMATECH (United States)
Christof M. Schilz, Infineon Technologies AG (Germany)
Thomas Engel, Carl Zeiss Microelectronic Systems GmbH (Germany)
Axel M. Zibold, Carl Zeiss Microelectronic Systems GmbH (Germany)
Takashi Yasui, Semiconductor Leading Edge Technologies, Inc. (Japan)
Iwao Higashikawa, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 4889:
22nd Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Kurt R. Kimmel, Editor(s)

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