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Proceedings Paper

Characterization of macroporous silicon for electronic applications
Author(s): Tatiana S. Perova; Ekaterina V. Astrova; Remy Maurice; Daria Potapova; T. N. Vasunkina; R. A. Moore
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Paper Abstract

Micro-Raman spectroscopy was used in this study for the analysis of the influence of process conditions on the strain and stress in macro-porous silicon (ma-PS) layers. As expected, it was found that oxidation results in significant wafer bending, depending on the layer porosity. The magnitude of stress of about 0.33 Gpa was found for ma-PS sample with lattice constant of 4 mm while for sample with the lattice constant of 12μm it was only 0.175 GPa. Dissolution of the oxide layer restores the flatness of the samples after the first oxidation. Repetition of the oxidation cycles leads to a 'memory effect', as the residual deformation increases. The results are consistent with results obtained for similar samples using X-ray diffractometry and topography and curvature measurements.

Paper Details

Date Published: 27 August 2003
PDF: 8 pages
Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003); doi: 10.1117/12.467295
Show Author Affiliations
Tatiana S. Perova, Trinity College Dublin (Ireland)
Ekaterina V. Astrova, A.F. Ioffe Physico-Technical Institute (Russia)
Remy Maurice, Trinity College Dublin (Ireland)
Daria Potapova, Trinity College Dublin (Ireland)
T. N. Vasunkina, A.F. Ioffe Physico-Technical Institute (Russia)
R. A. Moore, Trinity College Dublin (Ireland)


Published in SPIE Proceedings Vol. 4876:
Opto-Ireland 2002: Optics and Photonics Technologies and Applications
Vincent Toal; Norman Douglas McMillan; Gerard M. O'Connor; Eon O'Mongain; Austin F. Duke; John F. Donegan; James A. McLaughlin; Brian D. MacCraith; Werner J. Blau, Editor(s)

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