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Proceedings Paper

High-power-gas-discharge- and laser-plasma-based EUV sources
Author(s): Frank Flohrer; Kai Gaebel; Diethard Kloepfel; Peter Koehler; Imtiaz Ahmad; S. Goetze; Juergen Kleinschmidt; Vladimir Korobotchko; Jens Ringling; Guido Schriever; Uwe Stamm
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Paper Abstract

In this paper we discuss new results from investigations on high power EUV sources for micro-lithography based on gas discharge produced plasmas and laser produced plasmas. The EUV development is performed at XTREME technologies GmbH, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena. For gas discharge EUV sources we report data based on Xenon filled Z-pinches. Prototypes of the EUV source achieve an EUV output power of 10 W in-band in continuous operation. Repetition rates of 1 kHz are possible with liquid cooling of the discharge head. The spectral distribution of the EUV radiation shows a maximum around 13.5 nm and matches the reflection characteristics of silicon/molybdenum multilayer mirrors. Conversion efficiencies between 0.25 percent and 0.7 percent into a solid angle of 2p sr were achieved with the Z-pinch source depending the discharge geometry. The total EUV average power in the spectral range between 5 nm and 50 nm is about 200 W in 1.8 sr. Pulse energy stability data show standard deviation between 1-4 percent. Spatial and temporal emission characteristics of the discharge source in dependence on the discharge geometry are discussed. The laser plasma investigations are performed with an experimental setup consisting of a diode pumped laser system coupled to a liquid jet target. Since the conversion efficiency into EUV-power depends critically on the emitter density in the interaction region, we use a Xenon-jet, which is cryogenically liquefied and injected under high pressure into the vacuum vessel. Thus the laser is impinging on a target of solid-state density, which allows the generation of EUV-radiation with high conversion efficiencies of 0.5 percent into a solid angle of 2p sr.

Paper Details

Date Published: 6 May 2002
PDF: 7 pages
Proc. SPIE 4631, Gas and Chemical Lasers and Intense Beam Applications III, (6 May 2002); doi: 10.1117/12.465786
Show Author Affiliations
Frank Flohrer, XTREME technologies GmbH (Germany)
Kai Gaebel, XTREME technologies GmbH (Germany)
Diethard Kloepfel, XTREME technologies GmbH (Germany)
Peter Koehler, XTREME technologies GmbH (Germany)
Imtiaz Ahmad, XTREME technologies GmbH (Germany)
S. Goetze, XTREME technologies GmbH (Germany)
Juergen Kleinschmidt, XTREME technologies GmbH (Germany)
Vladimir Korobotchko, XTREME technologies GmbH (Germany)
Jens Ringling, XTREME technologies GmbH (Germany)
Guido Schriever, XTREME technologies GmbH (Germany)
Uwe Stamm, XTREME technologies GmbH (Germany)


Published in SPIE Proceedings Vol. 4631:
Gas and Chemical Lasers and Intense Beam Applications III
Steven J. Davis; Michael C. Heaven, Editor(s)

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