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Proceedings Paper

Semiconductor multiple quantum well photorefractive devices for vibration measurement
Author(s): Tsutomu Shimura; Satoshi Iwamoto; Sayoko Taketomi; Yasuhiko Arakawa; Kazuo Kuroda
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Paper Abstract

Some characteristics of photorefractive semiconductor multiple quantum well devices are discussed from the point of view of a material for the vibration measurement system using two-wave mixing. Device structure and device fabrication is explained, and some results of the measurements on the characteristics of the device are presented and discussed. Finally, the system of vibration measurements is described and some results are discussed. The smallest detectable amplitude of the vibration is 0.4 nm and the signal is linear up to 25 nm. Cut off frequency is 34 kHz at the incident intensity of 90mW/cm2.

Paper Details

Date Published: 20 September 2002
PDF: 8 pages
Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); doi: 10.1117/12.465749
Show Author Affiliations
Tsutomu Shimura, Univ. of Tokyo (Japan)
Satoshi Iwamoto, Univ. of Tokyo (Japan)
Sayoko Taketomi, Univ. of Tokyo (Japan)
Yasuhiko Arakawa, Univ. of Tokyo (Japan)
Kazuo Kuroda, Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 4919:
Advanced Materials and Devices for Sensing and Imaging
Jianquan Yao; Yukihiro Ishii, Editor(s)

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