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Proceedings Paper

Micro Raman scattering of InxGa1-xAs/InP grown by LPMOCVD
Author(s): Guoqing Miao; Yixin Jin; Xianggui Kong; Hong Jiang; Shuwei Li; Guang Yuan; Hong Song
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Paper Abstract

The InxGa1-xAs/InP was grown by low-pressure metalorganic chemical vapor deposition (LPMOCVD). We used Raman spectroscopy to characterize the quality of epilayers and measure the strain. Raman spectra from InxGa1-xAs epitaxial layers of various compositions were studied. Raman spectra were obtained at 300K, 248K, 193K, 138K, and 80K. The difference in the frequencies of their GaAs-like LO phonons was to calculate stress for the InGaAs/InP, leading to direct formula for the evaluation of the epilayer stress.

Paper Details

Date Published: 20 September 2002
PDF: 4 pages
Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); doi: 10.1117/12.465654
Show Author Affiliations
Guoqing Miao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Yixin Jin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Xianggui Kong, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Hong Jiang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Shuwei Li, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Guang Yuan, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Hong Song, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 4919:
Advanced Materials and Devices for Sensing and Imaging
Jianquan Yao; Yukihiro Ishii, Editor(s)

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