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Proceedings Paper

Photoemission from quantum-confined structure of nonlinear optical materials
Author(s): Kamakhya Prasad Ghatak; Shambhu Nath Biswas
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Paper Abstract

The photoemission from quantum wells, quantum wires, and quantum dots of nonlinear optical materials is studied, taking n-CdGeAs2 as an example. The authors have formulated the photoemission from the aforementioned materials by deducing the new carrier energy spectra in all cases, taking into account various types of anisotropies of the energy band parameters. It is found that the photoemission increases with incident photon energy in a ladder-like manner and also exhibits oscillatory dependences with changing film thickness and the carrier density, respectively, for all cases. The numerical values of the photoemission is greatest in quantum dots and least in quantum wells. The well-known results have been shown as special cases under certain limiting conditions of our generalized expressions. The theoretical formulations are in agreement with the experimental observations as reported elsewhere.

Paper Details

Date Published: 1 August 1991
PDF: 13 pages
Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); doi: 10.1117/12.46513
Show Author Affiliations
Kamakhya Prasad Ghatak, Univ. of Jadavpur (India)
Shambhu Nath Biswas, Bengal Engineering College (India)

Published in SPIE Proceedings Vol. 1484:
Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches
Randolph E. Longshore; Jan W. Baars, Editor(s)

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