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Proceedings Paper

Ion implantation and diffusion for electrical junction formation in HgCdTe
Author(s): Lucia O. Bubulac
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Paper Abstract

Ion implantation in HgCdTe is a well-established approach for fabricating IR- sensitive photovoltaic devices with n-on-p type junctions. The technique typically uses ion implantation of light species (usually B) to form the n region by the diffusion of irradiation-induced defects, including Hg atoms, in the material doped by Hg-vacancy acceptors. Also, the approach to form electrical junctions by the classical technique of ion implantation for chemical doping followed by the diffusion and activation of the implanted species has been demonstrated. This paper focuses mainly on p-type extrinsic doping with As diffusion from an ion implanted source.

Paper Details

Date Published: 1 August 1991
PDF: 5 pages
Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); doi: 10.1117/12.46508
Show Author Affiliations
Lucia O. Bubulac, Rockwell Science Ctr. (United States)


Published in SPIE Proceedings Vol. 1484:
Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches
Randolph E. Longshore; Jan W. Baars, Editor(s)

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